Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

Breakdown behaviour of high-voltage GaN-HEMTs

degradation of oil impregnated paper insulation under influence of repetitive fast high voltage impulses

در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...

Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET

Capacitance between terminals of a power semiconductor device substantially affects on its switching operation. This paper presents a capacitance–voltage (C–V) characterization system for measuring high voltage SiC–JFET and the results. The C–V characterization system enables one to impose high drain-source voltage to the device and extracts the capacitance between two of three terminals in FET...

Modeling of Voltage-Dependent Diffused Resistors

A voltage-dependent diffused resistor model has been developed using conventional voltage controlled current sources (VCCS’s) defined by a two-dimensional polynomial for simulations of mixed-signal circuits. The polynomial coefficients can be defined by a simple firstorder polynomial which can be a function of geometry and process variables to accurately reflect the manufacturing process. Alter...